Copper doped tin oxide film and its method of preparation for fabrication of perovskite solar cell

Name of the Inventor: Kaushik Pal and Jitendra Bahadur (MIED & CON)

Application Number: 202111034269(IN)

Date of Patent Filing: 29.07.2021

Summary: The present invention relates to the copper doped tin oxide (Cu doped SnO2) film and its method of preparation which is used as an efficient electron transport layer (ETL) for fabrication of low temperature planar perovskite solar cell (PSC) using solution processing approach. The low temperature solution processed SnO2 as an effective electron transport material for the fabrication of PSCs under ambient conditions.